Samsung has begun mass producing 20-nanometre 8-gigabit (Gb) graphics double data rate 5 (GDDR5) dynamic random-access memory (DRAM) to meet the demand of high-quality graphics DRAM due to increasing usage of 3D games and ultra high-definition (UHD) content.
The Suwon, Korea-based company said the world's first 20-nanometre 8Gb GDDR5 overcame the limitation of capacity and speed compared with its own 4Gb GDDR5 DRAM, which had a reading speed of 7Gb per second per pin.
The company's new DRAM maximum speed is 8Gb per second per pin, more than four times faster than the DDR3 DRAM widely used in current laptops in the market.
Two chips on the company's new memory can process up to 64GB of graphical images per second, which is equal to processing 12 full high-definition DVDs in a mere second, Samsung stated.
With the 20-nanometre 8Gb GDDR5 DRAM, Samsung said it has completed its line-up of 8Gb DRAM solutions based on its leading-edge 20-nanometre process technology, which now covers the server, PC, mobile, and graphics memory markets.
Samsung will continue expanding its production of 20-nanometre DRAMs, including 4Gb, 6Gb, and 8Gb, to secure its leading position in high-end IT market segments as well as more value-driven markets.
"We expect our 8Gb GDDR5 will provide original equipment manufacturers (OEMs) with the best graphics memory solution available for game consoles as well as general use notebook PCs," said Choi Joo-sun, executive vice president of Memory Sales and Marketing at Samsung.
"By expanding our production of 20-nano-based DRAM products, including the new GDDR5, we will meet increasing global customer demand and take the lead in accelerating the growth of the premium memory market."
Source: ZDNet Korea (zdnet.co.kr)