Samsung has begun production of SSD drives aimed at enterprise server and datacentre providers built on the company's 3D Vertical NAND (V-NAND) technology.
The company says that by making its Charge Trap Flash technology three-dimensional, it is able to increase flash storage reliability by two to 10 times, and also have "twice the write performance over conventional 10nm-class floating gate NAND flash memory."
Samsung will be offering two SSD drives built on the technology: 960GB and 480GB versions. The 960GB drive will tout the highest performance, offering a 6-gigabit-per-second SATA interface and 35,000 erase cycles. The drive's dimensions will be 10x7 centimetres, and only 7 millimetres high.
"The 3D V-NAND will drive disruptive innovation that can be compared to a Digital Big Bang in the global IT industry, and contribute to much more significant growth in the memory market," said ES Jung, executive vice president, semiconductor R&D centre at Samsung Electronics in a statement.
Samsung has been working on the 3D V-NAND technology for nearly a decade, and is armed to the teeth with over 300 patents relating to it.