Samsung has created the first 4 GB dynamic random access memory chip manufactured on 50 nanometers.
For Samsung, the effort--creating a 50 nm, 4GB DDR3 DDRAM chip, is part of a movement to cook up dense memory chips that reduce power.
In a statement, Samsung argues these chips could improve efficiency in data centers:
For the new generation of “green” servers, the 4Gb DDR3's high density combined with its lower level of power consumption will not only provide a reduction in electricity bills, but also a cutback in installment fees, maintenance fees and repair fees involving power suppliers and heat-emitting equipment.
Samsung's 4GB DDR3 DRAM chip operates at 1.35 volts, a 20 percent improvement over the previous generation. The chip maxes out at 1.6 gigabits per second. The chip can be configured in various modules to accommodate servers, desktops and laptops.