Researchers at Rice University's Department of Mechanical Engineering and Materials Science have successfully created single-atom sheets of an insulator: hexagonal Boron Nitride (h-BN).
The breakthrough could help graphene kick silicon back into the 20th century, paving the way for nanoscale field-effect transistors, quantum capacitors or biosensors.
The used vapour deposition to deposit a layer of h-BN between one and five atoms thick onto a copper substrate. It can then be tranferred to other materials.
More in the announcement here.