So-called 'wonder material' graphene may be many things, but a replacement for silicon? Not so much, says the head of the graphene flagship that won €1bn in funding last month.
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Researchers' creation of a silicon-based field-effect transistor that mimics the electrical properties of graphene shows the battle for the future of electronics is still on.
Swiss researchers have made a prototype microchip using a substance called molybdenite, which could prove to be a rival to both silicon and graphene
Not content with taking on the might of silicon, now graphene in all its two-dimensional glory is giving the evil eye to copper. According to an announcement from Rensselaer Polytechnic Institute, graphene is a promising candidate to replace copper as the size of circuitry on chips shrinks ever smaller.
Researchers have found a way to make lithium ion batteries hold a charge ten times greater than they do at present, and charge ten times faster. To do this they have had to overcome some limitations of wonder-material graphene.
Samsung Electronics will acquire Grandis, a Silicon Valley-based company that specializes in spin transfer torque random access memory, or STT-RAM.
Graphene: famous for being a Nobel Prize prompting wonder material, and for having no band gap. The lack of band gap means graphene’s future as a possible replacement for silicon has always looked bleak, because a band gap is the property that allows a transistor to be switched on and off.
Graphene hints at a world of electronics beyond silicon, unshackled from Moore's Law. What can we expect from this wonder material over the next 10 years?
Researchers at IBM have succeeded in creating a complete high-speed integrated circuit made from by depositing multiple layers of graphene on a silicon wafer
IBM, having wowed us all in April with graphene transistors that run at 155GHz, has gone one step further and now reports success in building a high-speed, graphene-based circuit.The researchers, writing in the June 10 issue of Science, describe how they deposited multiple layers of graphene on a silicon wafer.
Sellotape and sugar rub shoulders with high-temperature furnaces and low-pressure chambers in a rush to produce graphene, which aims to be the 21st century's successor to silicon
Researchers at the University of California, Berkeley, have created a graphene-based optical modulator that they think could lead to digital communications up to 10 times faster than is possible with currently-deployed technology.Graphene is a one-atom thick layer of crystallised carbon that many hope will overcome the limitations of silicon and lead to viable quantum computing.
IBM has demonstrated a new super whizzy graphene transistor, clocking in at 155GHz, up from the 100GHz it benched last year.The breakthrough was made possible because the transistor was set on a substrate of "diamond-like carbon", itself layered on a commercial silicon wafer.
This week, IBM began something of a band-gap backlash against wunder material graphene. After the computer firm said graphene would never fully replace silicon, a group of scientists in Switzerland announced that there was another two dimensional industrial lubricant with more traditional semi-conductor properties – molybdenum - that could send silicon into retirement.
Watch out graphene. Just a week after IBM said the two dimensional wonder-carbon would never fully replace silicon, graphene has yet more competition.
Silicon might have to share the spotlight with graphene, but it won’t be totally retired. So say researchers at IBM, who have found that their graphene transistors can’t be fully switched off.
In an about-face move, IBM has revealed that graphene can't fully replace silicon inside CPUs reports Bit-tech, a UK-based hardware enthusiast site. The reason? A graphene transistor can't actually be completely switched off.
Graphene, wonder material though it may be, is horribly difficult to grow in the clean, perfect sheets that electronics engineers need to build the successors to today’s silicon chips. But new research from scientists at Cornell will make it easier to see where the defects are in a sheet of graphene, leading eventually to better fabrication processes.
Scientists in the US have found a way of growing graphene on etched silicon carbide, producing the highest ever density of graphene transistors: an array of 10,000 top-gated transistors on a .24cm square chip.
Two University of Manchester, England scientists have been awarded this year's Nobel Prize in Physics for their work on graphene, widely seen as having the potential to replace silicon in electronics.
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