Researchers' creation of a silicon-based field-effect transistor that mimics the electrical properties of graphene shows the battle for the future of electronics is still on.
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Graphene: famous for being a Nobel Prize prompting wonder material, and for having no band gap. The lack of band gap means graphene’s future as a possible replacement for silicon has always looked bleak, because a band gap is the property that allows a transistor to be switched on and off.
IBM has demonstrated a new super whizzy graphene transistor, clocking in at 155GHz, up from the 100GHz it benched last year.The breakthrough was made possible because the transistor was set on a substrate of "diamond-like carbon", itself layered on a commercial silicon wafer.
In an about-face move, IBM has revealed that graphene can't fully replace silicon inside CPUs reports Bit-tech, a UK-based hardware enthusiast site. The reason? A graphene transistor can't actually be completely switched off.
Researchers at Rice University and the University of California, Riverside have taken advantage of another quirk in graphene's arsenal, ambipolarity, to build and test a triple mode transistor, that could lead to yet smaller and cooler (not in the iPod sense) wireless devices.Conventionally, ability of a transistor to conduct either electrons (negative charge) or holes (positive charge) is fixed during fabrication.
IBM Research plans to announce that it has demoed a radio-frequency graphene transistor with the highest frequency so far
IBM Research has demonstrated a radio-frequency graphene transistor with the highest frequency (100 GigaHertz) so far.
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