From what I can glean from this article and the paper, it looks at though each bit cell can be addressed separately, rather than in big blocks such as conventional flash. If so, does this eliminate all the huge write issues of traditional flash that make writes take so long?
Also, I note from the Wikipedia article on resistive switching, apparently SiO2 resistive switching has been studied since 1967 ( https://secure.wikimedia.org/wikipedia/en/wiki/Resistive_random-access_memory#cite_note-7 )
Also, is this a form of the memristor? These are currently based on titanium dioxide, but at least superficially have much in common with the SiOx approach discussed here.
Discussion on:
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