The world's second largest semiconductor company by revenue said on Tuesday that its NAND flashes, realised by stacking 3 bit multi-level cell (MLC) in 48 layers, will be used in solid-state drives (SSD).
Samsung said the new chips will double the capacity of its existing SSD line-up. It will allow a single die to have 32 gigabytes (256 gigabits) of memory.
The South Korean tech behemoth was the world's first to launch 3D V-NANDs last year in August. At the time, Samsung stacked 3-bit MLCs to 32 layers.
The latest chip stores more data in the same space and consumes less power than previous iterations.
Samsung said it would produce the new NAND flashes for the remainder of the year, and offer terabyte-level SSDs for both consumers and enterprises.
The conglomerate's NAND flashes are known to be used for its own products, as well as those used by rival Apple.
"We can now provide the best advanced memory solutions, with even higher efficiency based on improved performance, power utilization and manufacturing productivity, thereby accelerating growth of the high-performance and the high-density SSD markets," said Jun Young-hyun, president of the memory business at Samsung, in a statement.
"By making full use of Samsung V-NAND's excellent features, we will expand our premium-level business in the enterprise and data center market segments, as well as in the consumer market, while continuing to strengthen our strategic SSD focus," he added.