Samsung debuts world's first 3D V-NAND SSDs for enterprise

V-NAND offers a 20 percent performance increase, over 40 percent improvement in power consumption, and more than 20 percent increase in sequential and random write speeds.
Written by Adrian Kingsley-Hughes, Senior Contributing Editor

While Samsung might be better known to most as a maker of consumer electronics, the company also manufactures chips and a myriad of components, and its latest product is a high-reliability SSD storage drive for enterprise applications.

Samsung's new V-NAND technology for SSD brings with it performance increases, power consumption savings, and a much-needed increase in reliability.

V-NAND SSDs come in 480GB and 960GB flavors, with the higher capacity drive boasting the highest level of performance, offering more than 20 percent increase in sequential and random write speeds by utilizing 64 dies of MLC 3D V-NAND flash.

The new V-NAND SSD also offers 35K program erase cycles before wear starts to affect the cells, and is available in a 2.5 inch form factor, which offers server manufacturers greater design flexibility and scalability.

"By applying our 3D V-NAND – which has overcome the formidable hurdle of scaling beyond the 10-nanometer (nm) class, Samsung is providing its global customers with high density and exceptional reliability, as well as an over 20 percent performance increase and an over 40 percent improvement in power consumption," said E.S. Jung, executive vice president, semiconductor R&D center at Samsung Electronics and a keynote speaker at the Flash Memory Summit.

"As we pioneer a new era of memory technology, we will continue to introduce differentiated green memory products and solutions for the server, mobile and PC markets to help reduce energy waste and to create greater shared value in the enterprise and for consumers."

According to Samsung's literature, the proprietary 3D V-NAND technology achieves manufacturing productivity improvements over twice that of 20nm-class planar NAND flash, by making use of cylinder-shaped 3D Charge Trap Flash cell structures and vertical interconnect process technology to link the 24 layers comprising the 3D cell array.

“The 3D V-NAND will drive disruptive innovation that can be compared to a Digital Big Bang in the global IT industry," said Jung, "and contribute to much more significant growth in the memory market.”

Production of V-NAND SSDs is slated to begin this month.

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