SanDisk and Toshiba link up on 3D NAND technology

SanDisk is claiming a world first for its 256Gb, three-bit-per-cell, 48-layer, 3D NAND technology.

Image: Toshiba

Breakthroughs in 3D NAND technology continue to push the technology forward. Today, SanDisk and Toshiba have announced their own new processor: a 256Gbit, three-bit-per-cell, 48 layer, 3D NAND chip.

When it will arrive is open to question: while reports suggest it will be available early next year, Toshiba would only say that it "is expected to begin shipping in SanDisk's products in 2016".

According to SanDisk, the 3D NAND chip is designed for use in a wide range of consumer, mobile, and enterprise products.

Back in March, SanDisk and Toshiba announced the world's first 48-layer Bit Cost Scalable (BiCS) flash memory chip. At launch, it was a two-bit-per-cell, 128Gb device with a 3D 'stacked cell' structure flash. The companies have now improved that density to three-bit-per-cell.

"BiCS is a nonvolatile memory architecture designed to bring new levels of density, scalability, and performance to flash-based devices," SanDisk said. "BiCS NAND memory will also provide enhanced write/erase endurance, write speeds and energy efficiency relative to conventional 2D NAND."

"This is the world's first 256Gb X3 chip, developed using our industry-leading 48-layer BiCS technology and demonstrating SanDisk's continued leadership in X3 technology," Dr Siva Sivaram, VP of memory technology for SanDisk, said.

Earlier this year, Samsung Electronics reportedly inked an agreement to produce its 3D NAND solid state drives for Google.

The agreement will see Samsung supply 3D NAND SSD products for Google datacenters.

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