Samsung debuts world's first 3D V-NAND SSDs for enterprise

Samsung debuts world's first 3D V-NAND SSDs for enterprise

Summary: V-NAND offers a 20 percent performance increase, over 40 percent improvement in power consumption, and more than 20 percent increase in sequential and random write speeds.

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TOPICS: Storage, Samsung
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While Samsung might be better known to most as a maker of consumer electronics, the company also manufactures chips and a myriad of components, and its latest product is a high-reliability SSD storage drive for enterprise applications.

Samsung's new V-NAND technology for SSD brings with it performance increases, power consumption savings, and a much-needed increase in reliability.

V-NAND SSDs come in 480GB and 960GB flavors, with the higher capacity drive boasting the highest level of performance, offering more than 20 percent increase in sequential and random write speeds by utilizing 64 dies of MLC 3D V-NAND flash.

The new V-NAND SSD also offers 35K program erase cycles before wear starts to affect the cells, and is available in a 2.5 inch form factor, which offers server manufacturers greater design flexibility and scalability.

"By applying our 3D V-NAND – which has overcome the formidable hurdle of scaling beyond the 10-nanometer (nm) class, Samsung is providing its global customers with high density and exceptional reliability, as well as an over 20 percent performance increase and an over 40 percent improvement in power consumption," said E.S. Jung, executive vice president, semiconductor R&D center at Samsung Electronics and a keynote speaker at the Flash Memory Summit.

"As we pioneer a new era of memory technology, we will continue to introduce differentiated green memory products and solutions for the server, mobile and PC markets to help reduce energy waste and to create greater shared value in the enterprise and for consumers."

According to Samsung's literature, the proprietary 3D V-NAND technology achieves manufacturing productivity improvements over twice that of 20nm-class planar NAND flash, by making use of cylinder-shaped 3D Charge Trap Flash cell structures and vertical interconnect process technology to link the 24 layers comprising the 3D cell array.

“The 3D V-NAND will drive disruptive innovation that can be compared to a Digital Big Bang in the global IT industry," said Jung, "and contribute to much more significant growth in the memory market.”

Production of V-NAND SSDs is slated to begin this month.

Topics: Storage, Samsung

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6 comments
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  • What is 35K program erase cycles?

    Searched the net and always get this Samsung press release which simply states "The new V-NAND SSD also offers 35K program erase cycles before wear starts to affect the cells". Can't find a definition.
    lepoete73
  • 35K cycles

    Sounds to me like they mean that a given portion of the SSD can be programmed and erased 35000 times before a significant chance of error/fatigue.

    This has always been regarded as a problem for flash drives, so 35K seems like a breakthrough in reliability.
    dimonic
    • Re: 35K cycles

      Having FLASH with 35k erase/program cycles is not an breakthrough. Such FLASH is commonly found in enterprise SSDs from all makers.

      But, if Samsung can claim 35k cycles at current mainstream MLC prices, then that would be good news. So far.. no pricing is available, though. So, let's just wait and see.
      danbi
  • Erase Cycles are

    what wears the charge trap cells.. before most were rated about 20,000 erase cycles before some cells start to drop out and have to be marked out as bad.. once they start dropping, well, it is like a hard drive that starts not being able to write ot sectors.. time to move to a new drive before you loose your data.. this new chip claims it can withstand up to 35,000 erase cycles before it starts to wear out.. not bad.. since it takes a lot to write, then erase and write again all of the cells in a Flash even 10,000 times.. 35,000 in an enterprise might be telling, but if you had one it would be doubtful you would wear it out before you replaced it for a larger capacity when they were available.

    Just my thoughts on this.. and nearly a Terabyte?
    Putertechn
  • Nice job Samsung!

    The write cycle boost is amazing. The size is amazing. The power use is amazing. The speed is amazing. Unfortunately, I bet the stratospheric price will give CFOs a stroke.
    BillDem
  • A few questions...

    What is the transistor technology and lithography? 9nm? 7nm?

    Are they traditional planar flash cells, or are they using hi-k / metal-gate devices, FinFETs, uniaxial strain, etc.?
    Jacob VanWagoner