New RAM promises longer battery life for ultrathin and Ultrabook devices
As users expect desktop-level performance from mobile devices, the pressure is on component manufacturers to improve performance while at the same time reducing overall power consumption. Micron steps up to the plate.
Semiconductor solutions company Micron has become the first DRAM vendor to receive Intel validation for its 30-nanometer reduced-power DDR3L-RS SDRAM designed specifically for ultrathin computing devices and tablets.
The new 2Gb and 4Gb chips consume far less power in standby mode than regular PC DRAM, while offering the same high performance and cost effectiveness. This improved power consumption is achieved by reducing the self refresh power (IDD6), meaning that the RAM needs to draw far less power to keep the data in memory, typically as little as 3.5 mA. Intel's own validation results can be found here.
This memory will find its way into mobile devices based on Intel 7 series/C216 chipsets using third-generation Intel Core i7 Ivy Bridge processors.
"Micron has been one of the leaders in the development and commercialization of DDR3L-RS and the introduction of its 30nm product is confirmation of this," said Mike Howard, senior principal analyst, DRAM and Memory at IHS iSuppli. "DDR3L-RS is an excellent option for customers who have tight power budgets and need high performance at a competitive price. We expect many of the next-generation ultrathin platforms to take advantage of DDR3L-RS".
"Micron was the first DRAM supplier validated on the Ivy Bridge platform with DDR3L-RS, setting the industry standard for reduced standby PC DRAM," said Geof Findley, Memory Enabling Senior Manager at Intel.
As well as 2Gb and 4Gb chips, Micron is also in the process of testing 8Gb DDR3L-RS modules, and production of these higher capacity memory chips is expected to start in December.